Polycrystalline diamond growth on ?-Ga<sub>2</sub>O<sub>3</sub> for thermal management

نویسندگان

چکیده

Abstract We report polycrystalline diamond epitaxial growth on ? -Ga 2 O 3 for device-level thermal management. focused establishing conditions accompanying the study of various nucleation strategies. A window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration , a conductivity 110 ± 33 W m ?1 K and diamond/ boundary resistance 30.2 1.8 G were measured. The film stress managed by optimization techniques preventing delamination film. This work marks significant step towards management electronic devices.

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ژورنال

عنوان ژورنال: Applied Physics Express

سال: 2021

ISSN: ['1882-0786', '1882-0778']

DOI: https://doi.org/10.35848/1882-0786/abf4f1